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Revista de ciencias e ingeniería de materiales

Decay of Impurity Nano-inclusions of Cobalt in Silicon under the Influence of Thermal Annealing

Abstract

Nozim Turgunov

The influence of a thermoannealing on electrical conduction of silicon monocrystals doped by cobalt has been studied. Also, analysis of sequence of the impurity nanoinclusion’s disinteration under influence of thermoannealing has been carried out by the method of electron-probe microanalysis.

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